Process for integrating on an inert substrate a device comprising at least a passive element and an active element and corresponding integrated device

An integrated device comprising:

• an inert substrate;
• a protective dielectric layer on the inert substrate;
• an active component having a polysilicon island above the protection dielectric layer;
• a first covering dielectric layer in contact direct with the protection dielectric layer and covering the active component;
• a resistor integrated directly on the first covering dielectric layer;
• a second covering dielectric layer in contact with the first covering dielectric layer and covering the resistor;
• a plurality of electric contacts of a first conductive material in contact direct with corresponding active region of the active component;
• and
• a plurality of contact regions in contact with respective electric contacts in the plurality of electric contacts and of a second conductive material different from the first conductive material.

An integrated device comprising:

• an inert substrate;
• a protective dielectric layer on the inert substrate;
• an active component having a polysilicon island above the protection dielectric layer;
• a first covering dielectric layer in contact direct with the protection dielectric layer and covering the active component;
• a portion of a capacitor integrated directly on the first covering dielectric layer;
• a second covering dielectric layer in contact direct with the first covering dielectric layer and covering the portion of the capacitor;
• a plurality of electric contacts of a first conductive material in contact with corresponding active region of the active component;
• and
• a plurality of contact regions in contact with respective electric contacts in the plurality of electric contacts and of a second conductive material different from the first conductive material.