Semiconductor device and manufacturing method thereof
AssigneeUnited Microelectronics Corp.
InventorsChan-Lon Yang, Tzu-Feng Kuo, Hsin-Huei Wu, Ching-I Li, Shu-Yen Chan
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Abstract
A semiconductor device includes a plurality of active areas disposed on a semiconductor substrate. A manufacturing method of the semiconductor device includes performing a first annealing process on the semiconductor substrate by emitting a first laser alone a first scanning direction, and performing a second annealing process on the semiconductor substrate by emitting a second laser alone a second scanning direction. The first scanning direction and the second scanning direction have an included angle.
Claims22
A manufacturing method of semiconductor device, comprising:
- providing a semiconductor substrate;
- performing a first annealing process on the semiconductor substrate by emitting a first laser along a first scanning direction;
- and
- performing a second annealing process on the semiconductor substrate by emitting a second laser along a second scanning direction, wherein the first scanning direction and the second scanning direction have an included angle,
- wherein, the first laser scans along a plurality of first scanning paths in a linear discrete fashion, the first scanning paths have edges arranged with an arc shape, such that the area covered by all of the first scanning paths completely overlaps the surface area of the semiconductor substrate, the second laser scans along a plurality of second scanning paths in a linear discrete fashion, and the second scanning paths have edges arranged with an arc shape, such that the area covered by all of the second scanning paths completely overlaps the surface area of the semiconductor substrate.
A manufacturing method of semiconductor device, comprising:
- providing a semiconductor substrate, comprising a plurality of active areas, and each of the active areas has a long axis, wherein a portion of the long axes of the active areas are substantially parallel to a first direction, and the other portion of the long axes of the active areas are substantially parallel to a second direction, and the first direction is not parallel to the second direction;
- performing a first annealing process on the semiconductor substrate by emitting a first laser along a first scanning direction, wherein the first scanning direction and the first direction have an acute included angle when viewed in top view;
- and
- performing a second annealing process on the semiconductor substrate by emitting a second laser along a second scanning direction, wherein the second scanning direction and the first scanning direction have an included angle when viewed in top view.
Dependencies are inferred from the claim text.