Sputtering and aligning multiple layers having different boundaries

A method of forming multilayered structure on substrates, the method comprising:

• providing a processing apparatus comprising a first opening and a second opening, the second opening provided on a shutter, the second opening being smaller than the first opening;
• providing a substrate comprising a first site isolation region;
• aligning the first site isolation region relative to the first opening;
• forming a first layer on the substrate, wherein forming the first layer comprises sputtering a first material through the first opening and wherein forming the first layer defines a first deposition area of the first layer;
• adjusting position of the shutter such that the second opening is positioned within a boundary of the first opening;
• and
• forming a second layer on the first layer, wherein forming the second layer comprises sputtering a second material through the second opening, wherein forming the second layer defines a second deposition area of the second layer, and wherein the second deposition area is within a boundary of the second deposition area;
• adjusting the position of the shutter such that the shutter is clear from the boundary of the first opening;
• and
• forming a third layer on the semiconductor substrate, wherein forming the third layer comprises sputtering a third material through the first opening, wherein forming the third layer defines a third deposition area of the third layer, and wherein the third deposition area is aligned with the first deposition area,
• wherein the second layer is positioned in between the first layer and the second layer.