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US 8,575,026 B2Granted
Method of protecting sidewall surfaces of a semiconductor substrate
AssigneeInfineon Technologies AG
InventorManfred Engelhardt
Life of this patent
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Abstract
One or more embodiments may include a method of making a semiconductor structure, comprising: forming a first opening partially through a semiconductor substrate; forming a first dielectric layer over a sidewall surface of the first opening; and forming a second opening partially through a semiconductor substrate, the second opening being below the first opening.
Claims20
A method of making a semiconductor structure, comprising:
- forming a first opening partially through a semiconductor substrate;
- forming a first dielectric layer over a sidewall surface of said first opening;
- forming a second opening partially through said semiconductor substrate, said second opening being below said first opening;
- and
- forming a conductive material over a sidewall surface of said first dielectric layer, said conductive material not being in direct contact with said second opening.
2 more elements
Dependencies are inferred from the claim text.