Semiconductor device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsKeiji Ikeda, Tsutomu Tezuka, Yoshihiko Moriyama
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Abstract
According to one embodiment, a method of manufacturing a MOS semiconductor device. In the method, a gate electrode is formed on a gate insulating film provided on a channel region which is a part of an Si layer and which is interposed between a source/drain region, and a film mainly includes of Ge is made to grow on the source/drain region. Then, and the film mainly includes of Ge is made to react with a metal, forming an intermetallic compound film having a depthwise junction position identical to a growth interface of the film mainly includes of Ge.
Claims12
A method of manufacturing a MOS semiconductor device, comprising:
- forming a gate electrode on a gate insulating film provided on a channel region which is a part of an Si layer and which is interposed between a source/drain region;
- growing a film comprising Ge, on the source/drain region;
- making the film comprising Ge react with a metal, thereby forming an intermetallic compound film having a depthwise junction position identical to a growth interface of the film comprising Ge, and
- injecting ions into the intermetallic compound film to form the source/drain region, and injecting ions of an element capable of modulating the height of a Schottky barrier into the intermetallic compound film.
A method of manufacturing a 3D-structured MOS semiconductor device, comprising:
- forming a gate electrode on a gate insulating film provided on a channel region which is a fin-shaped part of an Si layer formed on a substrate and which is interposed between a source/drain region;
- growing a film comprising Ge, on the source/drain region;
- making the film comprising Ge react with a metal, thereby forming an intermetallic compound film having a depthwise junction position identical to a growth interface of the film comprising Ge, and
- injecting ions into the intermetal compound film to form the source/drain region in, and injection ions of an element capable of modulating the height of a Schottky barrier into the intermetallic compound film.
Dependencies are inferred from the claim text.