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US 8,574,820 B2Granted
Method for fabricating semiconductor device
AssigneeHynix Semiconductor Inc.
InventorChang-Goo Lee
Life of this patent
Estimating the term…
Abstract
A method for fabricating a semiconductor device includes: forming a first photoresist pattern with a first opening over an etch target layer; forming a second photoresist pattern with a plurality of second openings over the first photoresist pattern; and forming a plurality of patterns by etching the etch target layer by using the first photoresist pattern and the second photoresist pattern as an etch barrier.
Claims20
A method for fabricating a semiconductor device, comprising:
- forming a first photoresist pattern with a first opening over an etch target layer;
- forming a second photoresist pattern with a plurality of second openings over the first photoresist pattern, wherein a size of the first opening is larger than a size of the second opening;
- and
- forming a plurality of patterns by etching the etch target layer by using the first photoresist pattern and the second photoresist pattern as an etch barrier.
1 more element
A method for fabricating a semiconductor device, comprising:
- forming an etch target layer over a substrate having a first region and a second region defined therein;
- selectively exposing the first region to light to form a first photoresist pattern with a first opening over the etch target layer;
- forming a shielding layer over the surface of the first photoresist pattern;
- simultaneously exposing the first region and the second region to light to form a second photoresist pattern with a plurality of second openings over the first photoresist pattern covered with the shielding layer, wherein a size of the first opening is larger than a size of the second opening;
- and
- forming a plurality of patterns by etching the etch target layer by using the first photoresist pattern and the second photoresist pattern as an etch barrier.
3 more elements
A method for fabricating a semiconductor device, comprising:
- forming an etch target layer over a substrate having a first region and a second region defined therein;
- forming a negative-type photoresist pattern with a first opening over the etch target layer, the first opening corresponding to the first region;
- simultaneously exposing the first region and the second region to light to form a positive-type photoresist pattern, which has a plurality of second openings over the first and second regions, over the negative-type photoresist pattern, the second opening corresponding to a plurality of pattern to be formed in the etch target layer of the first region, wherein a size of the first opening is larger than a size of the second opening;
- and
- forming the plurality of patterns by etching the etch target layer by using the negative-type photoresist pattern and the positive-type photoresist pattern as an etch barrier.
2 more elements
Dependencies are inferred from the claim text.