Power mesh for multiple frequency operation of semiconductor products

A semiconductor platform for implementing multiple-frequency operations, the semiconductor platform comprising:

• a plurality of physical resources comprising embedded functions and a configurable transistor fabric, the transistor fabric comprising at least first and second portions, the first portion of the transistor fabric configured to instantiate a first function having higher frequency operations than the second portion of the transistor fabric;
• a plurality of logical resources corresponding to the physical resources of the semiconductor platform;
• and
• a fixed power mesh to support multiple frequency operations, the fixed power mesh comprising a plurality of localized grids, at least two of the localized grids operating at a different frequency relative to one another, the first portion of the configurable transistor fabric being connected to one of the localized grids in a vicinity of the first portion to support the first function having higher frequency operations.

An apparatus for implementing multiple-frequency operations in a semiconductor platform, the apparatus comprising:

• memory;
• and
• at least one processor coupled with the memory, the at least one processor being operative:
• (i) to select an application set, the application set having a plurality of physical resources comprising embedded functions and a configurable transistor fabric, a plurality of logical resources corresponding to the physical resources of the semiconductor platform;
• (ii) to read a customer's requirements comprising desired performance of a semiconductor product;
• (iii) to determine that the selected application set does not meet the desired performance of the customer's requirements;
• (iv) to calculate a plurality of parameters to meet the desired performance of the customer's requirements;
• (v) to modify a configurable power mesh as a function of the desired performance of the customer's requirements, the configurable power mesh comprising at least first and second configurable grids, the first configurable grid being configured to operate at a different frequency than the second configurable grid;
• (vi) to modify the configurable transistor fabric to meet the desired performance of the customer's requirements;
• (vii) to program a first portion of the transistor fabric to instantiate a first function having higher frequency operations than a second portion of the transistor fabric;
• and (viii) to modify the configurable power mesh in the vicinity of the first portion to support the first function having higher frequency operations.