System and method for determining ionization susceptibility using x-rays
AssigneeThe Boeing Company
InventorsMark Joseph Clemen, Jr., Clarence Lavere Gordon, III, Jerry Lee Wert
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Abstract
A system for determining ionization susceptibility including a sample, an x-ray generator configured to generate a pulsed x-ray beam, and focusing optics disposed between the sample and the x-ray generator, the focusing optics being configured to focus the pulsed x-ray beam into a spot on the sample.
Claims20
A system comprising:
- an integrated circuit comprising a silicon layer with a metallization layer positioned over the silicon layer and wherein the metallization layer is thinner than the silicon layer;
- an x-ray generator configured to generate a pulsed x-ray beam, wherein the pulsed x-ray beam is at least about 1 keV and of sufficient energy to propagate through the silicon layer and the to metallization layer, wherein each pulse of said pulsed x-ray beam has a pulse width of at most about 1 nanosecond;
- and
- focusing optics disposed between said sample and said x ray generator said pulsed x-ray beam, said focusing optics being configured to focus said pulsed x-ray beam into a spot on the integrated circuit.
A system for determining ionization susceptibility comprising:
- an articulateable surface;
- an integrated circuit comprising a silicon layer with a metallization layer positioned over the silicon layer and wherein the metallization layer is thinner than the silicon layer, wherein the integrated circuit is mounted on said articulateable surface;
- an x-ray generator configured to generate a pulsed x-ray beam, of at least about 1 keV and of sufficient energy to propagate through the silicon layer and the to metallization layer, wherein each pulse of said pulsed x-ray beam has a pulse width of at most about 1 nanosecond;
- focusing optics disposed between said integrated circuit and said pulsed x-ray beam and configured to focus said pulsed x-ray beam into a spot on the integrated circuit;
- and
- a collimator disposed between said focusing optics and the integrated circuit, said collimator defining an aperture therein, wherein said aperture is aligned with said spot and has a diameter of at most about 1 micron.
A method for determining ionization susceptibility of an integrated circuit comprising a silicon layer with a metallization layer positioned over the silicon layer and wherein the metallization layer is thinner than the silicon layer comprising the steps of;
- generating a pulsed x-ray beam of at least about 1 keV and of sufficient energy to propagate through the silicon layer and the to metallization layer, wherein each pulse of said pulsed x-ray beam has a pulse width of at most about 1 nanosecond;
- focusing said pulsed x-ray beam into a spot on the integrated circuit;
- and
- observing a response of the integrated circuit to said focused, pulsed x-ray beam.
Dependencies are inferred from the claim text.