Nonvolatile memory device, programming method thereof and memory system including the same

A nonvolatile memory device comprising:

• a memory cell array comprising a substrate and a plurality of memory cells which are stacked in a direction vertical to the substrate;
• and
• a reading and writing circuit connected to the memory cell array through a plurality of bit lines,
• wherein in a programming operation, the reading and writing circuit applies a first positive voltage to at least one bit line corresponding to memory cells to be programmed and a second positive voltage to at least one bit line corresponding to memory cells to be program-prohibited,
• wherein groups of the plurality of memory cells respectively configure NAND strings, and the bit lines are respectively connected to at least two of the NAND strings,
• wherein each NAND string includes at least two selection transistors connected in series between memory cells of each NAND string and the bit lines.

A memory system comprising:

• a nonvolatile memory device;
• and
• a controller controlling the nonvolatile memory device,
• wherein the nonvolatile memory device comprises:
• a memory cell array comprising a substrate and a plurality of memory cells which are stacked in a direction vertical to the substrate;
• and
• a reading and writing circuit connected to the memory cell array through bit lines,
• wherein in a programming operation,
• the reading and writing circuit applies a positive voltage to bit lines corresponding to memory cells to be programmed,
• wherein groups of the plurality of memory cells respectively configure NAND strings, and the bit lines are respectively connected to at least two of the NAND strings respectively,
• wherein each NAND string includes at least two selection transistors connected in series between memory cells of each NAND string and the bit lines.