Method of programming a semiconductor memory device
AssigneeHynix Semiconductor Inc.
InventorsSang Oh Lim, Jin Su Park
Life of this patent
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Abstract
A method of programming a semiconductor memory device includes the steps of grouping memory cells in accordance with levels of threshold voltages to be programmed, programming the memory cell groups by sequentially applying program voltages to the memory cell groups, and program-verifying the memory cell groups.
Claims12
A method of programming a semiconductor memory device, the method comprising:
- grouping memory cells into memory cell groups in accordance with target program voltage levels;
- performing program operations on the memory cell groups by sequentially applying program voltages corresponding to the target program voltage levels to the memory cell groups;
- and
- program-verifying the memory cell groups in sequence after the program operations on all of the memory cell groups are performed.
A method of programming a semiconductor memory device, memory cells of which are programmed to have one of first to third threshold voltage distributions, the method comprising:
- applying a first program voltage to program a first memory cell group whose threshold voltages are to be shifted into the first threshold voltage distribution;
- applying a second program voltage to program a second memory cell group whose threshold voltages are to be shifted into the third threshold voltage distribution;
- and
- program-verifying the first and second memory cell groups in sequence after the first program voltage is applied to the first memory cell group and the second program voltage is applied to the second memory cell group.
A method of programming a semiconductor memory device, memory cells of which are programmed to have one of first to third threshold voltage distributions, the method comprising:
- applying a first program voltage to program a first memory cell group whose threshold voltages are to be shifted into the first threshold voltage distribution;
- applying a second program voltage to program a second memory cell group whose threshold voltages are to be shifted into the second third threshold voltage distribution;
- applying a third program voltage to program a third memory cell group whose threshold voltages are to be shifted into the third threshold voltage distribution;
- and
- program-verifying the first through third memory cell groups in sequence after the first program voltage is applied to the first memory cell group, the second program voltage is applied to the second memory cell group, and the third program voltage is applied to the third memory cell group.
Dependencies are inferred from the claim text.