Magnetic random access memory (MRAM) read with reduced disturb failure

A method, comprising:

• signaling a first multiplexer, the first multiplexer selecting to pass a first current through a parallel reference magnetic tunnel junction from a free layer to a fixed layer of the parallel reference magnetic tunnel junction in response to the signaling of the first multiplexer;
• signaling a second multiplexer, the second multiplexer selecting to pass a second current through an anti-parallel reference magnetic tunnel junction from a fixed layer to a free layer of the anti-parallel reference magnetic tunnel junction in response to the signaling of the second multiplexer;
• and
• reading a data magnetic tunnel junction during the passing of the first current and the passing of the second current.

An apparatus, comprising:

• a magnetic tunnel junction having a first terminal and a second terminal;
• first-means for selecting read circuitry coupled between the first terminal of the magnetic tunnel junction and a first means for multiplexing, the first multiplexing means being coupled to a voltage source and coupled to a ground, the first multiplexing means being configured to toggle the first terminal between the voltage source and the ground via the first selecting means;
• second means for selecting read circuitry coupled between the second terminal of the magnetic tunnel junction and a second means for multiplexing, the second multiplexing means being coupled to the voltage source and coupled to the ground, the second multiplexing means being configured to toggle the second terminal between the voltage source and the ground;
• and
• a read select line coupled to the first selecting means and the second selecting means and configured to simultaneously turn on the first selecting means and the second selecting means.

A method, comprising the steps of:

• signaling a first multiplexer, the first multiplexer selecting to pass a first current through a parallel reference magnetic tunnel junction from a fixed layer to a free layer of the parallel reference magnetic tunnel junction in response to the signaling of the first multiplexer;
• signaling a second multiplexer, the second multiplexer selecting to pass a second current through an anti-parallel reference magnetic tunnel junction from a free layer to a fixed layer of the anti-parallel reference magnetic tunnel junction in response to the signaling of the second multiplexer;
• and
• reading a data magnetic tunnel junction during the passing of the first current and the passing of the second current.