Nonvolatile memory cell, nonvolatile memory device and method for driving the same
AssigneeHynix Semiconductor Inc.
InventorsHae-Chan Park, Gap-Sok Do, Jang-Uk Lee
Life of this patent
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Abstract
A nonvolatile memory cell is able to reduce the size per the unit area by employing a dual gate structure where the chalcogenide compound is used for a channel. The nonvolatile memory cell includes a phase-change layer, a first and a second gate that are in contact with sides of the phase-change layer to face each other across the phase-in change layer and control a current flowing through the phase-change layer by each gate being arranged to induce the phase transition of the phase-change layer independently of the other.
Claims20
A nonvolatile memory device, comprising:
- a channel line formed of a phase-change material;
- and
- a plurality of first word lines and a plurality of second word lines that are formed on a channel line to face each other across the channel line and control a current flowing through the channel line by each word line being arranged to induce the phase transition in surrounding regions of the channel line independently of other word lines, wherein the first and second word lines are formed on the channel line in the surrounding regions.
A method for driving a nonvolatile memory device, the method comprising:
- a data writing step of writing data by supplying a reset current or a set current to a selected first word line;
- a pre-readout step of supplying the reset current to a second word line facing to the selected first word line;
- and
- a readout step of reading out the data by supplying a readout current to a bit line connected to a channel line.
Dependencies are inferred from the claim text.