Magnetoresistive random access memory
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTien-Wei Chiang, Kai-Chun Lin, Ya-Chen Kao, Hung-Chang Yu
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Abstract
A magnetoresistive random access memory (MRAM) cell includes a magnetic tunnel junction (MTJ), a top electrode disposed over the MTJ, a bottom electrode disposed below the MTJ, and an induction line disposed above or below the MTJ. The induction line is configured to induce a magnetic field at the MTJ.
Claims18
A magnetoresistive random access memory (MRAM) cell, comprising:
- a magnetic tunnel junction (MTJ);
- a top electrode disposed over the MTJ;
- a bottom electrode disposed below the MTJ;
- and
- an induction line disposed above or below the MTJ,
- wherein the induction line is configured to induce a magnetic field at the MTJ, and
- wherein the induction line includes an arch shaped portion for inducing the magnetic field at the MTJ.
A magnetoresistive random access memory MRAM cell array write circuit comprising:
- a plurality of MRAM cells arranged in an array of rows and columns, each MRAM cell comprising a magnetic tunnel junction (MTJ), a top electrode disposed over the MTJ, a bottom electrode disposed below the MTJ;
- at least one induction line disposed with respect to each of two columns of MRAM cells, each induction line configured to induce a magnetic field at the MTJs with respect to which it is disposed;
- and
- at least one current source for providing current to the at least one induction line,
- wherein the at least one induction line includes only one induction line per two columns of MRAM cells, each column of MRAM cells having only one induction line disposed in connection with it.
A magnetoresistive random access memory (MRAM) cell, comprising:
- a magnetic tunnel junction (MTJ) having an oval or elliptical shape having short (X) and long (Y) axes;
- a top electrode disposed over the MTJ;
- a bottom electrode disposed below the MTJ;
- and
- an induction line disposed above or below the MTJ,
- wherein the induction line includes an arch shaped portion configured to induce a magnetic field at the MTJ.
A magnetoresistive random access memory (MRAM) cell array write circuit comprising:
- a plurality of MRAM cells arranged in an array of rows and columns, each MRAM cell comprising a magnetic tunnel junction (MTJ), a top electrode disposed over the MTJ, a bottom electrode disposed below the MTJ;
- at least one induction line disposed with respect to each of two columns of MRAM cells, each induction line configured to induce a magnetic field at the MTJs with respect to which it is disposed;
- and
- at least one current source for providing current to the at least one induction line,
- wherein the at least one induction line includes a pair of induction lines disposed at opposite sides of the MTJs of each individual column of MTJs, and
- wherein current from the at least one current source flows in the same direction through the pair of induction lines during a write operation.
Dependencies are inferred from the claim text.