Reading a memory element within a crossbar array
AssigneeHewlett-Packard Development Company, L.P.
InventorFrederick Perner
Life of this patent
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Abstract
A method for reading a memory element within a crossbar array includes switching a column line connected to a target memory element of the crossbar array to connected to an input of a current mirror; applying an error voltage to unselected rows of the crossbar array; applying a sense voltage to a row line connected to the target memory element; and measuring an output current of the current mirror.
Claims9
A system for reading memory, elements within a crossbar array, said crossbar array comprising a set of row lines intersecting a set of column lines, memory elements being disposed at intersections between said row lines and said column lines, the system comprising:
- a current mirror, an input of said current mirror being selectively connected through switching circuitry to a column line of said set of column lines;
- an error voltage supply selectively connected through additional switching circuitry to said row lines, wherein an error voltage produced by said error voltage supply is matched to a voltage formed across said current mirror;
- and
- a sense voltage supply for selectively applying a sense voltage to one of said row lines;
- in which said sense voltage and said error voltage create an output current of said current mirror.
Dependencies are inferred from the claim text.