TMR sensor film using a tantalum insertion layer and systems thereof

A tunnel magnetoresistance (TMR) head, comprising:

• a lead layer above a substrate;
• a seed layer above the lead layer;
• an antiferromagnetic (AFM) layer above the seed layer;
• a first ferromagnetic layer above the AFM layer;
• a second ferromagnetic layer above the first ferromagnetic layer;
• a coupling layer between the first and second ferromagnetic layers, the coupling layer causing a magnetization of the second ferromagnetic layer to be coupled to a magnetization of the first ferromagnetic layer;
• a fixed layer above the second ferromagnetic layer;
• an insertion layer in the fixed layer;
• a barrier layer above the fixed layer;
• a free layer above the barrier layer;
• a cap layer above the free layer;
• and
• a third ferromagnetic layer above the fixed layer and below the barrier layer, wherein the insertion layer is positioned in the fixed layer about equidistant from an interface of the fixed layer and the second ferromagnetic layer to an interface of the fixed layer and the third ferromagnetic layer.