Semiconductor device, semiconductor device manufacturing method, liquid crystal display device and electronic apparatus

A liquid crystal display device, comprising:

• a liquid crystal panel comprising a semiconductor device;
• and
• a light source illuminating the liquid crystal panel,
• wherein the semiconductor device comprises:
• a supporting substrate;
• a semiconductor film on the supporting substrate;
• a gate insulating film on the semiconductor film;
• a gate electrode on the gate insulating film;
• and
• a source region and a drain region formed by introducing boron to the semiconductor film;
• and
• the semiconductor film is configured such that the integral of product A×B over the total wavelength range (nm) is not more than 5, where A is a relative intensity spectrum obtained by normalizing a luminescence spectrum of incident light upon the semiconductor film from the supporting substrate side for illuminating the liquid crystal panel, by the maximum value of the luminescence spectrum, B is a relative intensity spectrum obtained by normalizing an absorption spectrum of the semiconductor film by the maximum value of the absorption spectrum, and a wavelength of the incident light has a range of 400 nm to 800 nm.

A semiconductor device comprising:

• a supporting substrate;
• a semiconductor film on the supporting substrate;
• a gate insulating film on the semiconductor film;
• a gate electrode on the gate insulating film;
• and
• a source region and a drain region formed by introducing boron to the semiconductor film,
• wherein a thickness of the semiconductor film is within a range of 20 nm to 40 nm,
• the semiconductor device further comprises low-concentration regions provided between the source region and a channel forming region, and between the drain region and the channel forming region, respectively, the low-concentration regions each having a boron concentration smaller than that of the source region and that of the drain region, and the boron concentration in a lower surface side region on a side of the supporting substrate being smaller than that of an upper surface side region on the opposite side, a sheet resistance of each of the low-concentration region has a range of 3×105 Ω/□ to 2×107 Ω/□, and
• the source region and the drain region each comprise a region having a boron concentration in a range of 3.1×1018 cm−to 3.4×1020 cm−along a thickness direction from the lower surface of the semiconductor film on the side of the supporting substrate.

A semiconductor device comprising:

• a supporting substrate;
• a semiconductor film on the supporting substrate;
• a gate insulating film on the semiconductor film;
• a gate electrode on the gate insulating film;
• and
• a source region and a drain region formed by introducing boron to the semiconductor film,
• wherein a thickness of the semiconductor film is within a range of 20 nm to 40 nm,
• the semiconductor device further comprises low-concentration regions provided between the source region and a channel forming region, and between the drain region and the channel forming region, respectively, the low-concentration regions each having a boron concentration smaller than that of the source region and that of the drain region, and the boron concentration in a lower surface side region on a side of the supporting substrate being smaller than that of an upper surface side region on the opposite side,
• a sheet resistance of each of the low-concentration region has a range of 3×105Ω/□ to 1×106 Ω/□, and
• the source region and the drain region each comprise a region having a boron concentration in a range of 3.1×1018 cm−3 to 3.4×1020 cm−3 along a thickness direction from the lower surface of the semiconductor film on the side of the supporting substrate.

A semiconductor device comprising:

• a supporting substrate;
• a semiconductor film on the supporting substrate;
• a gate insulating film on the semiconductor film;
• a gate electrode on the gate insulating film;
• and
• a source region and a drain region formed by introducing boron to the semiconductor film,
• wherein a thickness of the semiconductor film is within a range of 20 nm to 40 nm,
• the semiconductor device further comprises low-concentration regions provided between the source region and a channel forming region, and between the drain region and the channel forming region, respectively, the low-concentration regions each having a boron concentration smaller than that of the source region and that of the drain region, and the boron concentration in a lower surface side region on a side of the supporting substrate being smaller than that of an upper surface side region on the opposite side,
• a sheet resistance of each of the low-concentration region has a range of 3×105 Ω/□ to 2×107 Ω/□, and
• the semiconductor film is configured such that the integral of product A×B over the total wavelength range (nm) is not more than 5, where A is a relative intensity spectrum obtained by normalizing a luminescence spectrum of incident light upon the semiconductor film, by the maximum value of the luminescence spectrum, B is a relative intensity spectrum obtained by normalizing an absorption spectrum of the semiconductor film by the maximum value of the absorption spectrum, and the incident light has a wavelength range of 400 nm to 800 nm.

A semiconductor device comprising:

• a supporting substrate;
• a semiconductor film on the supporting substrate;
• a gate insulating film on the semiconductor film;
• a gate electrode on the gate insulating film;
• and
• a source region and a drain region formed by introducing boron to the semiconductor film,
• wherein a thickness of the semiconductor film is within a range of 20 nm to 40 nm,
• the semiconductor device further comprises low-concentration regions provided between the source region and a channel forming region, and between the drain region and the channel forming region, respectively, the low-concentration regions each having a boron concentration smaller than that of the source region and that of the drain region, and the boron concentration in a lower surface side region on a side of the supporting substrate being smaller than that of an upper surface side region on the opposite side,
• a sheet resistance of each of the low-concentration region has a range of 3×105 Ω/□ to 1×106 Ω/□, and the semiconductor film is configured such that the integral of product A×B over the total wavelength range (nm) is not more than 5, where A is a relative intensity spectrum obtained by normalizing a luminescence spectrum of incident light upon the semiconductor film, by the maximum value of the luminescence spectrum, B is a relative intensity spectrum obtained by normalizing an absorption spectrum of the semiconductor film by the maximum value of the absorption spectrum, and the incident light has a wavelength range of 400 nm to 800 nm.

A semiconductor device comprising:

• a supporting substrate;
• a semiconductor film on the supporting substrate;
• a gate insulating film on the semiconductor film;
• a gate electrode on the gate insulating film;
• and
• a source region and a drain region formed by introducing boron to the semiconductor film,
• wherein a thickness of the semiconductor film is within a range of 20 nm to 40 nm,
• the semiconductor device further comprises low-concentration regions provided between the source region and a channel forming region, and between the drain region and the channel forming region, respectively, the low-concentration regions each having a boron concentration smaller than that of the source region and that of the drain region, and the boron concentration in a lower surface side region on a side of the supporting substrate being smaller than that of an upper surface side region on the opposite side,
• the source region and the drain region each comprise a region having a boron concentration in a range of 3.1×1018 cm−3 to 3.4×1020 cm−3 along a thickness direction from the lower surface of the semiconductor film on the side of the supporting substrate, and
• the semiconductor film is configured such that the integral of product A×B over the total wavelength range (nm) is not more than 5, where A is a relative intensity spectrum obtained by normalizing a luminescence spectrum of incident light upon the semiconductor film, by the maximum value of the luminescence spectrum, B is a relative intensity spectrum obtained by normalizing an absorption spectrum of the semiconductor film by the maximum value of the absorption spectrum, and the incident light has a wavelength range of 400 nm to 800 nm.