Photoelectric conversion apparatus and manufacturing method for a photoelectric conversion apparatus

A photoelectric conversion apparatus comprising:

• a plurality of photoelectric converting units disposed in a semiconductor substrate;
• and
• a plurality of isolation portions disposed in the semiconductor substrate so as to isolate the plurality of photoelectric converting units from one another,
• wherein each of the plurality of photoelectric converting units includes:
• a first semiconductor region containing impurities of a first conductivity type,
• a second semiconductor region, disposed below the first semiconductor region, containing impurities of a second conductivity type that is an opposite conductivity type to the first conductivity type,
• a third semiconductor region, disposed below the second semiconductor region, containing impurities of the second conductivity type at a lower concentration than the second semiconductor region, and
• a fourth semiconductor region, disposed below the third semiconductor region, containing impurities of the first conductivity type,
• wherein each of the plurality of isolation portions includes:
• a fifth semiconductor region, disposed at a location that is deeper than a surface of the semiconductor substrate and extending laterally to at least the second semiconductor region, containing impurities of the first conductivity type, and
• a sixth semiconductor region, disposed below the fifth semiconductor region and extending laterally to at least the third semiconductor region, containing impurities of the first conductivity type, and
• wherein diffusion coefficients of the impurities contained in the first semiconductor region and in the fifth semiconductor region are lower than a diffusion coefficient of the impurities contained in the sixth semiconductor region.