Thermally compensating dieletric anchors for microstructure devices

A semiconductor device comprising:

• a substrate comprising a handle layer, an insulator layer over the handle layer, and a device layer over the handle layer in which a plurality of active semiconductor devices is formed;
• and
• a microstructure integrally formed on the substrate, the microstructure comprising:
• a movable structure having an upper surface, a lower surface, a proximal portion, and a distal portion suspended above the substrate by at least one anchor homogenously formed from a dielectric material with a bottom portion having a bottom area of a bottom surface region attached to the substrate and an upper area of an upper surface region attached to the lower surface of the proximal portion of the movable structure, the at least one anchor further including a top portion having a lower area of a lower surface region attached to the upper surface of the proximal portion of the movable structure, wherein the lower surface region of the top portion and the upper surface region of the bottom portion are geometrically asymmetric.