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US 8,569,887 B2Granted
Post passivation interconnect with oxidation prevention layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChien Ling Hwang, Yi-Wen Wu, Chung-Shi Liu
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Abstract
A copper interconnect line formed on a passivation layer is protected by a copper-containing material layer including a group III element, a group IV element, a group V element or combinations thereof.
Claims20
An integrated circuit device, comprising:
- a semiconductor substrate;
- a passivation layer overlying the semiconductor substrate;
- a polymer layer overlying the passivation layer;
- an interconnect line formed between the passivation layer and the polymer layer, the interconnect line extending over a top surface of the passivation layer;
- and
- a protection layer formed between the interconnect line and the polymer layer;
- wherein the protection layer is a copper-containing material layer comprising at least one of a group III element, a group IV element and a group V element.
4 more elements
An integrated circuit device, comprising:
- a semiconductor substrate comprising a contact region;
- a passivation layer overlying the semiconductor substrate and having an opening exposing a portion of the contact region;
- a copper line overlying a portion of the passivation layer and filling the opening, electrically connected to the contact region;
- and
- a protection layer formed on a surface of the copper line and contacting sidewalls of the copper line, wherein the protection layer is a copper-containing material layer comprising at least one of a group III element, a group IV element, or a group V element.
2 more elements
An integrated circuit device, comprising:
- a semiconductor substrate;
- a passivation layer overlying the semiconductor substrate;
- a polymer layer overlying the passivation layer, a portion of the polymer layer in direct contact with a portion of the passivation layer;
- an interconnect line formed between the passivation layer and the polymer layer;
- and
- a protection layer formed between the interconnect line and the polymer layer;
- wherein the protection layer is a copper-containing material layer comprising at least one of a group III element, a group IV element and a group V element.
4 more elements
Dependencies are inferred from the claim text.