Package for high power devices
AssigneeInternational Rectifier Corporation
InventorHenning M. Hauenstein
Life of this patent
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Abstract
A semiconductor device package is formed of DBC in which thinned MOSgated and/or diode die are soldered to the bottom of an etched depression in the upper conductive layer. A via in the insulation layer of the DBC is filled with a conductive material to form a resistive shunt. Plural packages may be formed in a DBC card and may be separated individually or in clusters. The individual packages are mounted in various arrays on a support DBC board and heat sink. Integrated circuits may be mounted on the assembly and connected to the die for control of the die conduction.
Claims18
A semiconductor device package comprising:
- a semiconductor die having first and second parallel surfaces and a support can;
- said support can comprising an insulation body having top and bottom parallel surfaces with corresponding top and bottom conductive layers;
- said top conductive layer having a depression therein defining a web surface and a rim portion extending around at least a portion of the periphery of said web surface;
- said web surface having a plurality of dimples formed therein defining a perimeter of a desired location for said semiconductor die;
- said semiconductor die being disposed in said desired location in said depression.
Dependencies are inferred from the claim text.