Semiconductor device having a molded package

A semiconductor device having a molded package comprising:

• a semiconductor chip;
• a thick-film lead electrode having
• opposed upper and lower surfaces and
• a thickness between the upper and lower surfaces,
• wherein the thick-film lead electrode is a copper-based material:
• a plated Ag layer on part of the upper surface of the thick-film lead electrode,
• wherein the semiconductor chip is die-bonded to the plated Ag layer at the upper surface of the thick-film lead electrode,
• the semiconductor chip
• covers a first region of the plated Ag layer and
• does not cover a second region of the plated Ag layer, and
• the second region of the plated Ag layer is adjacent to the first region of the plated Ag layer;
• a copper oxide film
• on the upper surface of the thick-film lead electrode that is not covered by the plated Ag layer and
• on the second region of the plated Ag layer
• so that the second region of the plated Ag layer extends between the upper surface of the thick-film lead electrode and at least part of the copper oxide film;
• a thin-film lead electrode having
• opposed upper and lower surfaces and
• a thickness between the upper and lower surfaces,
• the thickness of the thin-film lead electrode being smaller than the thickness of the thick-film lead electrode;
• a wire bonded to the semiconductor chip and to the upper surface of the thin-film lead electrode;
• and
• a molding material
• encapsulating the semiconductor chip and the wire and
• only partially encapsulating the thick-film and thin-film lead electrodes,
• the molding material having opposed upper and lower surfaces,
• wherein a portion of the lower surface of the thick-film lead electrode is exposed at and on the lower surface of the molding material as a heat dissipating electrode,
• a portion of the upper surface of the thin-film lead electrode is exposed at and on the upper surface of the molding material as an input/output electrode, and
• a portion of the upper surface of the thick-film lead electrode is exposed at and on the package upper surface of the molding material as a grounding electrode.