Device having and method for forming fins with multiple widths

A structure for a semiconductor device, comprising:

• a first feature and a second feature formed simultaneously in a single etch process from a same monolithic substrate layer, the first feature and the second feature being integrally and continuously connected to each other;
• and
• the first feature having a width dimension of less than a minimum feature size achievable by lithography,
• the second feature having a width dimension of at least equal to a minimum feature size achievable by lithography,
• wherein the first and second features are in a metal layer of the semiconductor device.

A structure for a semiconductor device, comprising:

• a first feature and a second feature formed simultaneously in a single etch process from a same monolithic substrate layer, the first feature and the second feature being integrally and continuously connected to each other;
• and
• the first feature having a width dimension of less than a minimum feature size achievable by lithography,
• the second feature having a width dimension of at least equal to a minimum feature size achievable by lithography,
• wherein the first and second features are in an interlevel dielectric layer of the semiconductor device.