Piezo-acoustic thin film resonator having a crystalline zinc oxide layer

A capacitor structure (1) for forming a piezo-acoustic resonator, comprising:

• a lower electrode layer (5) arranged on a substrate surface (31) of a substrate (3);
• an upper electrode layer (6);
• a crystalline zinc oxide-containing dielectric layer (2) arranged between the electrode layer (5, 6), the zinc oxide-containing dielectric layer (2) having a plurality of zinc oxide monocrystals each with a polar crystal axis, the polar crystal axes of the zinc oxide monocrystals of the dielectric layer being tipped relative to the substrate surface (31);
• and
• an amorphous dielectric intermediate layer (4) interposed between the lower electrode (5) and the crystalline zinc oxide-containing dielectric layer (2), the intermediate layer (4) having an intermediate layer thickness (41) of 20 nm to 500 nm, the with the intermediate layer thickness being sufficient to achieve a tipping of the zinc oxide monocrystals.