Semiconductor devices having line type active regions and methods of fabricating the same

A semiconductor device, comprising:

• a device isolation layer which defines line type active regions in a semiconductor substrate;
• and
• gate electrodes of substantially uniform width which are disposed over the semiconductor substrate to be parallel to each other and intersect the line type active regions,
• wherein the gate electrodes include both a device gate electrode and a planar type device isolation gate electrodes,
• wherein a width of the planar type device isolation gate electrode is greater than a width of the device gate electrode, and
• wherein the width of the planar type device isolation gate electrode is on a same horizontal level with the width of the device gate electrode.

A semiconductor device, comprising:

• device isolation regions defining active regions in a semiconductor substrate;
• and
• at least four gate electrodes of substantially uniform width having at least two device gate electrodes and at least two device isolation gate electrodes,
• wherein the at least four gate electrodes completely overlap and intersect both one of the device isolation regions and one of the active regions, widths of the device isolation gate electrodes are greater than widths of the device gate electrodes at a same horizontal level being in parallel to a surface of the semiconductor substrate.