US 8,569,843 B2Granted

Semiconductor device

AssigneePanasonic Corporation

InventorsManabu Yanagihara, Kazushi Nakazawa, Tatsuo Morita, Yasuhiro Uemoto

Life of this patent

Estimating the term…

Loading patent…

Abstract

A bidirectional switch includes a plurality of unit cells 11 including a first ohmic electrode 15, a first gate electrode 17, a second gate electrode 18, and a second ohmic electrode 16. The first gate electrodes 15 are electrically connected via a first interconnection 31 to a first gate electrode pad 43. The second gate electrodes 18 are electrically connected via a second interconnection 32 to a second gate electrode pad 44. A unit cell 11 including a first gate electrode 17 having the shortest interconnect distance from the first gate electrode pad 43 includes a second gate electrode 18 having the shortest interconnect distance from the second gate electrode pad 44.

Claims11

Dependent claims

A semiconductor device comprising:

a plurality of unit cells including a semiconductor layer formed on a substrate, and a first ohmic electrode, a first gate electrode, and a second ohmic electrode formed on the semiconductor layer, the first gate electrode being between the first ohmic electrode and the second ohmic electrode;
a first gate electrode pad electrically connected to the first gate electrode;
a first ohmic electrode pad electrically connected to the first ohmic electrode;
and
a second ohmic electrode pad electrically connected to the second ohmic electrode, wherein
a portion of the first ohmic electrode and a portion of the second ohmic electrode are overlapped by the first ohmic electrode pad in plan view, and
a portion of the first ohmic electrode and a portion of the second ohmic electrode are overlapped by the second ohmic electrode pad in plan view.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application: 13/689,397Filed 29 Nov 2012 · division
Priority: JP 2008-27091721 Oct 2008
Published: US 2013/0087858 A111 Apr 2013
Granted: 29 Oct 2013
Term ends: Not estimatedThe source records don’t support an estimate.

Classification17 codes

H10D 84/83
Of only field-effect components: of only insulated-gate FETs [IGFET]
H10D 30/475
High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]: having wider bandgap layer formed on top of lower bandgap…
H10D 62/126
Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions: top-view geometrical layouts of…
H10D 64/411
Gate electrodes for field-effect devices: for FETs

Family

PCT/JP2009/003255Parent of this division · filed 10 Jul 2009
US 2013/0087858 A1Pre-grant publication · published 11 Apr 2013
Application12/681,567Parent of this division
US 8,344,463 B2Parent of this division
US 2010/0213503 A1Published application
US 8,569,843 B2This patent

From the US filing history. Foreign family members aren’t listed.

Timeline

Citations

Open elsewhere

Building an agent or pulling many patents? Use the API or MCP server instead of scraping pages. Get an API key