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US 8,569,836 B2Granted
Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorMueng-Ryul Lee
Life of this patent
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Abstract
A semiconductor device includes an output port that has a first lateral double diffused metal oxide semiconductor (LDMOS) device and an electrostatic discharge protection device that has a second LDMOS device and a bipolar transistor and that protects the output port from electrostatic discharge. A breakdown voltage of the second LDMOS device is equal to or lower than a breakdown voltage of the first LDMOS device.
Claims15
A semiconductor device, comprising:
- an output port including a first lateral double diffused metal oxide semiconductor (LDMOS) device;
- and
- an electrostatic discharge protection device that includes a second LDMOS device and a bipolar transistor and that protects the output port from electrostatic discharge,
- a breakdown voltage of the second LDMOS device being equal to or lower than a breakdown voltage of the first LDMOS device.
1 more element
Dependencies are inferred from the claim text.