Organic semiconductor sensor device

A sensor device, comprising:

• a substrate having an upper surface with contacts thereon;
• a first organic semiconductor layer supported above the substrate, the first organic semiconductor layer including a plurality of sensor cells and comprising a grounded surface grid, the grounded surface grid comprising a plurality of doped p-type lines arranged in a grid and adjacent to a top surface of the first organic semiconductor layer;
• a second organic semiconductor layer positioned between the first organic semiconductor layer and the substrate, the second organic semiconductor layer comprising a control unit for the sensor device and a plurality of conductors on a bottom surface of the second organic semiconductor layer, the conductors configured to communicate with the contacts, the control unit configured to selectively access each of the plurality of sensor cells;
• a reactive interface layer disposed on the first organic semiconductor layer and having an exposed upper surface, the reactive interface layer comprising a plurality of regions, each region comprising a chemical that is selectively reactive to a specific substance in contact with the exposed upper surface, wherein at least two of the regions comprise different chemicals;
• and
• a frame extending outward from the substrate and adjacent to an edge of the reactive interface layer, the second organic semiconductor layer, and the first organic semiconductor layer, the frame comprising a frame portion that extends over and contacts a portion of a top surface of the reactive interface layer, the frame configured to secure the layers to the substrate;
• wherein a depletion region in at least one of the sensor cells is configured to vary in at least one dimension in response to a reaction in the reactive interface layer of at least one of the chemicals therein with the specific substance, the variation in the at least one dimension of the depletion region configured to cause a variation in a capacitance in the at least one sensor cell.

A sensor device, comprising:

• a substrate having an upper surface with contacts thereon;
• a first organic semiconductor layer supported above the substrate, the first organic semiconductor layer including an array of sensor cells and comprising a grounded surface grid, the grounded surface grid comprising a plurality of doped p-type lines arranged in a grid and adjacent to a top surface of the first organic semiconductor layer;
• a second organic semiconductor layer positioned between the first organic semiconductor layer and the substrate, the second organic semiconductor layer comprising a control unit for the sensor device and a plurality of conductors on a bottom surface of the second organic semiconductor layer, the conductors configured to communicate with the contacts, the control unit configured to selectively access each of the array of sensor cells;
• a reactive interface layer disposed on the first organic semiconductor layer and having an exposed upper surface, the reactive interface layer comprising a plurality of regions, each region located above a corresponding sensor cell in the array in the first organic semiconductor layer, each region comprising a chemical in a polymer, the chemical selectively reactive to a specific substance in contact with the exposed upper surface;
• and
• a frame extending outward from the substrate and adjacent to an edge of the reactive interface layer, the second organic semiconductor layer, and the first organic semiconductor layer, the frame comprising a frame portion that extends over and contacts a portion of a top surface of the reactive interface layer, the frame configured to secure the layers to the substrate;
• wherein a depletion region in at least one of the array of sensor cells is configured to vary in at least one dimension in response to a reaction in at least one region of the reactive interface layer of the chemical therein with the specific substance, the variation in the at least one dimension of the depletion region configured to cause a variation in a capacitance in the at least one sensor cell.