Back to results
US 8,569,807 B2Granted
Backside illuminated image sensor having capacitor on pixel region
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Chieh Chuang, Dun-Nian Yuang, Jen-Cheng Liu, Jeng-Shyan Lin, Wen-De Wang
Life of this patent
Estimating the term…
Abstract
A backside illuminated image sensor includes a semiconductor substrate having a front side and backside, a sensor element formed overlying the frontside of the semiconductor substrate, and a capacitor formed overlying the sensor element.
Claims20
A backside illuminated image sensor, comprising:
- a semiconductor substrate having a frontside and a backside;
- a sensor element formed overlying the frontside of the semiconductor substrate, the sensor element comprising:
- a transistor structure including a gate, a spacer, a source and a drain, and
- a light sensing region disposed in the source, the light sensing region having a dopant type opposite a dopant type of the source, wherein the light sensing region extends beneath the spacer of the transistor structure;
- and
- a capacitor formed overlying the sensor element, wherein the capacitor overlies an entirety of the light sensing region in one direction and the capacitor is electrically connected to the drain;
- a plurality of dielectric layers overlying the sensor element;
- and
- an interconnection structure formed in the plurality of dielectric layers;
- wherein at least two metal layers of the interconnection structure and at least one of the plurality of dielectric layers between the at least two metal layers form the capacitor and an additional metal layer of the interconnect is electrically connected between the sensor element and the capacitor.
7 more elements
A backside illuminated image sensor, comprising:
- a semiconductor substrate having a frontside and a backside, wherein a pixel region is defined on the frontside;
- a transistor structure in the pixel region overlying the frontside of the semiconductor substrate, wherein the transistor structure comprises a gate electrode formed on the frontside of the semiconductor substrate, a spacer, and source/drain regions formed in the frontside of the semiconductor substrate laterally adjacent the gate electrode;
- a light-sensing element formed on the source region, the light-sensing element having a dopant type opposite a dopant type of the source region in which the light-sensing element is formed, wherein the light-sensing element extends beneath the spacer of the transistor structure;
- a capacitor formed overlying an entirety of the light-sensing element in one direction and electrically coupled to the transistor structure in the drain region;
- a plurality of dielectric layers overlying the transistor structure and the light-sensing element;
- and
- an interconnection structure formed in the plurality of dielectric layers;
- wherein at least two metal layers of the interconnection structure and at least one of the plurality of dielectric layers formed between the at least two metal layers form the capacitor and an additional metal layer of the interconnect is electrically connected between the sensor element and the capacitor.
5 more elements
Dependencies are inferred from the claim text.