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US 8,569,796 B2Granted
Semiconductor wafer and semiconductor device having multilayered nitride semiconductor layer
AssigneeSanken Electric Co., Ltd.
InventorTetsuji Matsuo
Life of this patent
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Abstract
A semiconductor wafer includes a multilayered film having a structure in which nondoped first nitride semiconductor layers and nondoped second nitride semiconductor layers with a larger lattice constant than the first nitride semiconductor layer are laminated alternately, and a nondoped third nitride semiconductor layer which is located on the multilayered film and has a larger lattice constant than the first nitride semiconductor layer, wherein the semiconductor wafer has conductivity in a film-thickness direction.
Claims6
A semiconductor wafer comprising:
- a multilayered film having a structure in which nondoped first nitride semiconductor layers and nondoped second nitride semiconductor layers with a larger lattice constant than the first nitride semiconductor layer are laminated alternately;
- and
- a nondoped third nitride semiconductor layer which is located on the multilayered film and has a larger lattice constant than the first nitride semiconductor layer,
- wherein the semiconductor wafer has conductivity in a film-thickness direction, and
- a plurality of the multilayered films are included, and the multilayered film is located both above and underneath the third nitride semiconductor layer.
2 more elements
A semiconductor device, comprising:
- a semiconductor functional layer formed of nitride semiconductor in which both surfaces thereof are defined by a first main surface and a second main surface which faces the first main surface;
- a laminated body which is located on the second main surface and is conductive in a film-thickness direction, including a multilayered film having a structure in which nondoped first nitride semiconductor layers and nondoped second nitride semiconductor layers having a larger lattice constant than the first nitride semiconductor layer are laminated alternately, and a nondoped third nitride semiconductor layer which is located on the multilayered film and has a larger lattice constant than the first nitride semiconductor layer;
- and
- a pair of electrodes facing each other through the semiconductor functional layer and the laminated body
- wherein the laminated body includes a plurality of the multilayered films, and the multilayered film is located both above and underneath the third nitride semiconductor layer.
2 more elements
Dependencies are inferred from the claim text.