Semiconductor device and method of manufacturing the same

A semiconductor device, comprising:

• a silicon carbide substrate including first and second principal surfaces;
• a first conductive-type first silicon carbide layer provided on the first principal surface of the silicon carbide substrate;
• a second conductive-type first silicon carbide region formed on a surface of the first silicon carbide layer;
• a first conductive-type second silicon carbide region formed on a surface of the first silicon carbide region;
• a second conductive-type third silicon carbide region formed on the surface of the first silicon carbide region;
• a gate insulating film continuously formed on the surfaces of the first silicon carbide layer, the first silicon carbide region, and the second silicon carbide region;
• a first electrode formed of silicon carbide formed on the gate insulating film;
• a second electrode formed on the first electrode;
• an interlayer insulating film for covering the first and second electrodes;
• a third electrode electrically connected to the second silicon carbide region and the third silicon carbide region;
• and
• a fourth electrode formed on the second principal surface of the silicon carbide substrate;
• wherein the second silicon carbide region is adjacent to the third silicon carbide region.