Light emitting device and method for manufacturing the same

A light emitting device, comprising:

• a second electrode layer comprising a projection part, wherein the second electrode layer has a first portion, a second portion of the projection part, and a third portion;
• a first current blocking structure on the second electrode layer, wherein the current blocking structure has a first current blocking part and a second current blocking part;
• a second conductive type semiconductor layer on the first portion of the second electrode layer and the current blocking structure;
• an active layer on the second conductive type semiconductor layer;
• a first conductive type semiconductor layer on the active layer;
• and
• a first electrode layer on the first conductive type semiconductor layer, at least a portion of the first electrode layer corresponding with the first current blocking part in a vertical direction,
• wherein at least one portion of the first current blocking part overlaps the projection part in a vertical direction and the second current blocking part is disposed on the third portion of the second electrode layer.

A light emitting device, comprising:

• a second electrode layer comprising a first projection part and a second projection part;
• a current blocking layer on the first projection part of the second electrode layer;
• a second conductive type semiconductor layer on the second electrode layer and the current blocking layer;
• an active layer on the second conductive type semiconductor layer;
• a first conductive type semiconductor layer on the active layer;
• and
• a first electrode layer on the first conductive type semiconductor layer, at least a portion of the first electrode layer corresponding with the first projection part in a vertical direction,
• wherein the second projection part is disposed on a peripheral portion of the second electrode layer and is spaced from the first projection part.