Nitride-based semiconductor light-emitting device and manufacturing method thereof

A nitride-based semiconductor light-emitting device comprising:

• a translucent base;
• a first conductivity type electrode layer comprising at least one of a metal thin-film layer and a transparent conductive layer;
• a first conductivity type nitride-based semiconductor layer;
• a light-emitting layer;
• and
• a second conductivity type nitride-based semiconductor layer, wherein
• the translucent base, the first conductivity type electrode layer, the first conductivity type nitride-based semiconductor layer, the light-emitting layer, and the second conductivity type nitride-based semiconductor layer are successively layered in this order,
• the translucent base has a thickness of approximately 100 μm,
• a thick-film layer is embedded in said translucent base, and
• said translucent base is composed of a translucent resin.