Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same

An organic light emitting diode (OLED) display device, comprising:

• a substrate;
• a semiconductor layer disposed on the substrate, and comprising a crystallization inducing metal, a channel region, source and drain regions respectively disposed on opposing first and second sides of the channel, and edge regions that are doped with a first impurity and that extend continuously from the source region to the drain region, along opposing third and fourth sides of the channel region, and excluding center portions of the channel region, source region and drain region;
• a gate insulating layer insulating the semiconductor layer;
• a gate electrode insulated from the semiconductor layer by the gate insulating layer;
• source and drain electrodes electrically connected to the semiconductor layer;
• a first electrode electrically connected to one of the source and drain electrodes;
• and
• an organic layer and a second electrode disposed on the first electrode,
• wherein a first interconnection is formed through a first contact hole exposing the source region and a portion of the edge regions at edges of the source region,
• wherein a second interconnection is formed through a second contact hole exposing the drain region and a portion of the edge regions at edges of the drain region, and
• wherein the first impurity is doped at a dose of 1*e11cm3 to 3*e15/cm3 to getter the crystallization inducing metal into the edge regions of the semiconductor layer.