Organic field-effect transistor and semiconductor device including the same

A semiconductor device comprising:

• an organic field-effect transistor over a substrate, the organic field-effect transistor comprising a semiconductor layer including an organic semiconductor material, and a source electrode and a drain electrode formed in contact with the semiconductor layer,
• wherein the source electrode and the drain electrode each include:
• an electrically conductive layer;
• and
• a composite layer made of a mixture of an organic compound and a metal oxide, the composite layer being in direct contact with the organic semiconductor layer.

A semiconductor device comprising:

• an organic field-effect transistor over a substrate, the organic field-effect transistor comprising a semiconductor layer including an organic semiconductor material, and a source electrode and a drain electrode formed in contact with the semiconductor layer,
• wherein the source electrode and the drain electrode each include:
• an electrically conductive layer;
• a composite layer made of a mixture of an organic compound and a metal oxide, and
• a second layer including a material selected from the group consisting of an alkali metal, an alkaline earth metal, an alkali metal compound, and an alkaline earth metal compound, the second layer being interposed between the organic semiconductor layer and the composite layer, and in direct contact with the organic semiconductor layer.