Chemically-etched nanostructures and related devices
AssigneeCalifornia Institute of Technology
InventorsSeheon Kim, Axel Scherer, Jingqing Huang, Dong Yoon Oh
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AssigneeCalifornia Institute of Technology
InventorsSeheon Kim, Axel Scherer, Jingqing Huang, Dong Yoon Oh
Estimating the term…
A method of etching active quantum nanostructures provides the step of laterally etching of an intermediate active quantum nanostructure layer interposed between cladding layers. The lateral etching can be carried out on at least one side of the intermediate active quantum nanostructure layer selectively, with respect to the cladding layers to define at least one lateral recess or spacing in the intermediate active quantum nanostructure layer and respective lateral protrusions of cladding layers protruding with respect to the intermediate active quantum nanostructure layer. This method can be applied to create devices including active quantum nanostructures such as, for example, three-dimensional photonic crystals, a photonic crystal double-slab and a photonic crystal laser.
A method of etching active quantum nanostructures, the method comprising:
A wafer structure comprising:
A method of creating three-dimensional photonic crystals, the method comprising:
Three-dimensional photonic crystals comprising a photonic crystal backbone structure including alternating void spaces and walls, each wall including alternating layers of cladding and sacrificial layers;
A photonic crystal double slab comprising two photonic crystal membranes, the two photonic crystal membranes overlapping one another and being spaced apart by means of an intermediate gap, wherein at least one of the two photonic crystal membranes include at least one intermediate active quantum nanostructure layer.
A photonic crystal double slab comprising:
A photonic crystal laser comprising a photonic crystal double slab comprising two photonic crystal membranes, the two photonic crystal membranes overlapping one another and being spaced apart by means of an intermediate gap, wherein the photonic crystal double slab defines p-i-n or n-i-p doped layers.
A method of fabricating a photonic crystal laser comprising:
Dependencies are inferred from the claim text.