Semiconductor light emitting device, wafer, method for manufacturing semiconductor light emitting device, and method for manufacturing wafer

A semiconductor light emitting device comprising:

• a first layer including at least one of n-type GaN and n-type AlGaN;
• a second layer including p-type AlGaN;
• a light emitting portion provided between the first layer and the second layer, the light emitting portion having a single quantum well structure;
• and
• a second stacked structural body provided between the first layer and the light emitting portion;
• the single quantum well structure including,
• a first barrier layer including Alx1Ga1-x1-y1Iny1N (0<x1, 0≦y1, x1+y1<1),
• a second barrier layer provided between the first barrier layer and the second layer and including Alx2Ga1-x2-y2Iny2N (0<x2, 0≦y2, x2+y2<1), and
• a well layer provided between the first barrier layer and the second barrier layer, including Alx0Ga1-x0-y0Iny0N (0≦x0, 0<y0, x0+y0<1, y1<y0, y2<y0);
• the second stacked structural body including,
• a plurality of fifth layers including GaN, each of the plurality of fifth layers having a thickness smaller than a thickness of the first barrier layer and smaller than a thickness of the second barrier layer, and
• a plurality of sixth layers alternately stacked with the plurality of fifth layers and including GaInN, each of the plurality of sixth layers having a thickness smaller than a thickness of the well layer.

A wafer comprising:

• a first layer including at least one of n-type GaN and n-type AlGaN;
• a second layer including p-type AlGaN;
• a light emitting portion provided between the first layer and the second layer, the light emitting portion having a single quantum well structure;
• and
• a first stacked structural body provided between the first layer and the light emitting portion;
• the single quantum well structure including,
• a first barrier layer including Alx1Ga1-x1-y1Iny1N (0<x1, 0≦y1, x1+y1<1),
• a second barrier layer provided between the first barrier layer and the second layer and including Alx2Ga1-x2-y2Iny2N (0<x2, 0<y2, x2+y2<1), and
• a well layer provided between the first barrier layer and the second barrier layer, including Alx0Ga1-x0-y0Iny0N (0≦x0, 0<y0, x0+y0<1, y1<y0, y2<y0);
• the first stacked structural body including,
• a plurality of third layers including AlGaInN, each of the plurality of third layers having a thickness smaller than a thickness of the first barrier layer and smaller than a thickness of the second barrier layer, and
• a plurality of fourth layers alternately stacked with the plurality of third layers and including GaInN, each of the plurality of fourth layers having a thickness smaller than a thickness of the well layer.

A wafer comprising:

• a first layer including at least one of n-type GaN and n-type AlGaN;
• a second layer including p-type AlGaN;
• a light emitting portion provided between the first layer and the second layer, the light emitting portion having a single quantum well structure;
• and
• a second stacked structural body provided between the first layer and the light emitting portion;
• the single quantum well structure including,
• a first barrier layer including Alx1Ga1-x1-y1Iny1N (0<x1, 0≦y1, x1+y1<1);
• a second barrier layer provided between the first barrier layer and the second layer and including Alx2Ga1-x2-y2Iny2N (0<x2, 0≦y2, x2+y2<1), and
• a well layer provided between the first barrier layer and the second barrier layer, including Alz0Ga1-x0-y0Iny0N (0≦x0, 0<y0, x0+y0<1, y1<y0, y2<y0);
• the second stacked structural body including,
• a plurality of fifth layers including GaN, each of the plurality of fifth layers having a thickness smaller than thickness of the first barrier layer and smaller than a thickness of the second barrier layer, and
• a plurality of sixth layers alternately stacked with the plurality of fifth layers and including GaInN, each of the plurality of sixth layers having a thickness smaller than a thickness of the well layer.