Back to results
US 8,569,736 B2Granted
Light emitting diode
AssigneesTsinghua University, Hon Hai Precision Industry Co., Ltd.
InventorsYang Wei, Shou-Shan Fan
Life of this patent
Estimating the term…
Abstract
A light emitting diode includes a first semiconductor layer, an active layer and a second semiconductor layer stacked in that order; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer. The light emitting diode further includes a carbon nanotube layer. The carbon nanotube layer is enclosed in the interior of the first semiconductor layer. The carbon nanotube layer includes a number of carbon nanotubes.
Claims13
A light emitting diode comprising:
- a first semiconductor layer;
- an active layer stacked on the first semiconductor layer;
- a second semiconductor layer stacked on the active layer;
- a first electrode electrically connected to the first semiconductor layer;
- a second electrode electrically connected to the second semiconductor layer;
- and
- a carbon nanotube layer enclosed in an interior of the first semiconductor layer;
- wherein the carbon nanotube layer is a free-standing structure comprising a plurality of carbon nanotubes.
5 more elements
Dependencies are inferred from the claim text.