Semiconductor light-emitting element, electrode and manufacturing method for the element, and lamp
AssigneeToyoda Gosei Co., Ltd.
InventorsDaisuke Hiraiwa, Takehiko Okabe, Remi Ohba, Munetaka Watanabe
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AssigneeToyoda Gosei Co., Ltd.
InventorsDaisuke Hiraiwa, Takehiko Okabe, Remi Ohba, Munetaka Watanabe
Estimating the term…
A semiconductor light-emitting element including a substrate, a laminated semiconductor layer including a light-emitting layer formed over the substrate, one electrode (111) formed over the upper face of the laminated semiconductor layer, and an other electrode formed over the exposed surface of the semiconductor layer, from which the laminated semiconductor layer is partially cut off. The one electrode (111) includes a junction layer (110) and a bonding pad electrode (120) formed to cover the junction layer. The bonding pad electrode has a maximum thickness larger than that of the junction layer, and is composed of one or two or more layers. Slopes (110c), (117c) and (119c), which are made gradually thinner toward the outer circumference, are formed in the outer circumference portions (110d) and (120d) of the junction layer and the bonding pad electrode. Also disclosed is a method for manufacturing the element and a lamp.
A semiconductor light-emitting element comprising a substrate, a laminated semiconductor layer comprising a light-emitting layer formed on the substrate, one electrode formed on an upper surface of the laminated semiconductor layer, and another electrode formed on an exposed surface of the semiconductor layer, from which the laminated semiconductor layer is partially cut off;
Dependencies are inferred from the claim text.