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US 8,569,730 B2Granted
Carbon-based interface layer for a memory device and methods of forming the same
AssigneeSanDisk 3D LLC
InventorsHuiwen Xu, April D. Schricker, Er-Xuan Ping
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Abstract
In a first aspect, a memory cell is provided that includes (1) a first conductor; (2) a reversible resistance-switching element formed above the first conductor including (a) a carbon-based resistivity switching material; and (b) a carbon-based interface layer coupled to the carbon-based resistivity switching material; (3) a steering element formed above the first conductor; and (4) a second conductor formed above the reversible resistance-switching element and the steering element. Numerous other aspects are provided.
Claims8
A memory cell comprising:
- a first conductor;
- a metal-insulator-metal (MIM) stack formed above the first conductor, the MIM stack including:
- a bottom electrode;
- a first carbon-based interface layer disposed on the bottom electrode;
- a carbon-based resistivity switching material comprising carbon nanotubes formed on the first carbon-based interface layer;
- a second carbon-based interface layer disposed on the carbon-based resistivity switching material;
- and
- a top electrode disposed on the second carbon-based interface layer;
- a steering element formed above the first conductor;
- and
- a second conductor formed above the MIM stack and the steering element.
8 more elements
Dependencies are inferred from the claim text.