Nonvolatile memory with variable resistance change layers
AssigneeKabushiki Kaisha Toshiba
InventorsKensuke Takano, Yoshio Ozawa, Katsuyuki Sekine, Junichi Wada
Life of this patent
Estimating the term…
Abstract
A nonvolatile memory device includes: a first conductive layer; a second conductive layer; a first resistance change layer provided between the first conductive layer and the second conductive layer and having an electrical resistance changing with at least one of an applied electric field and a passed current; and a first lateral layer provided on a lateral surface of the first resistance change layer and having an oxygen concentration higher than an oxygen concentration in the first resistance change layer.
Claims16
A nonvolatile memory device comprising:
- a first conductive layer;
- a second conductive layer;
- a first resistance change layer provided between the first conductive layer and the second conductive layer and having an electrical resistance configured to change with at least one of an applied electric field or a passed current, the first resistance change layer having a lateral surface intersecting a plane perpendicular to a stacking direction from the first conductive layer toward the second conductive layer;
- and
- a first lateral layer contacting the lateral surface of the first resistance change layer, a direction from the first lateral layer toward the lateral surface of the first resistance change layer being perpendicular to the stacking direction, and the first lateral layer having an oxygen concentration higher than an oxygen concentration in the first resistance change layer,
- wherein the first resistance change layer includes AαMβOγ, and the first lateral layer includes Aα1Mβ1γ1 (γ1>γ), the A being a transition metal element, the M being a transition metal element, the O being oxygen.
A nonvolatile memory device comprising:
- a first conductive layer;
- a second conductive layer;
- a first resistance change layer provided between the first conductive layer and the second conductive layer and having an electrical resistance configured to change with at least one of an applied electric field and a passed current, the first resistance change layer having a lateral surface intersecting a plane perpendicular to a stacking direction from the first conductive layer toward the second conductive layer;
- and
- a first lateral layer contacting the lateral surface of the first resistance change layer, a direction from the first lateral layer toward the lateral surface of the first resistance change layer being perpendicular to the stacking direction, and the first lateral layer including an oxide of an element having a smaller absolute value of standard free energy of oxide formation than an element except oxygen contained in an oxide included in the first resistance change layer,
- wherein the first resistance change layer includes AαMβOγ, and the first lateral layer includes Aα1Mβ1Oγ1 (γ1>γ), the A being a transition metal element, the M being a transition metal element, the O being oxygen.
Dependencies are inferred from the claim text.