Method for dry chemical treatment of substrates and also use thereof
AssigneeFraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
InventorsStefan Reber, Gerhard Willeke
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Abstract
The invention relates to a method for dry chemical treatment of substrates selected from the group comprising silicon, ceramic, glass, and quartz glass, in which the substrate is treated in a heated reaction chamber with a gas which contains hydrogen chloride as etching agent, and also to a substrate which can be produced in this way. The invention likewise relates to uses of the previously mentioned method.
Claims21
Method for dry chemical treatment of a silicon substrate, in which the substrate is treated in a heated reaction chamber with an etching gas consisting of a chlorine-containing gas and/or a gas which contains at least one chlorine-containing compound and optionally H2 gas, characterised in that, during the treatment, cleaning of the substrate is effected in that the temperature is 700 to 1600° C. and the concentration of the chlorine-containing gas or chlorine-containing compound is in the range of 20 to 100% by volume, such that impurities and/or foreign atoms which are contained in the volume of the substrate are removed at least partially.
Method for texturing a silicon wafer, in which a silicon wafer is treated in a heated reaction chamber with a texturing gas consisting of a chlorine-containing gas or a gas which contains at least one chlorine-containing compound and optionally H2 gas at a temperature of 900 to 1100 ° C., wherein the concentration of the chlorine-containing gas or chlorine-containing compound is in the range of 20 to 100% by volume.
Dependencies are inferred from the claim text.