Manufacturing method of semiconductor device comprising silicide layer with varied thickness

A manufacturing method of a semiconductor device, comprising the steps of:

• forming a silicon film over a substrate with an insulating layer interposed therebetween;
• forming an insulating film over the silicon film;
• forming a gate electrode over the insulating film;
• forming an impurity region in the silicon film by adding an impurity element;
• selectively exposing the silicon film by selectively removing the insulating film;
• forming a metal film in contact with a surface of the exposed silicon film so that a thickness of the metal film is thinnest on a side surface of the insulating film and continuously increased until reaching an outer side surface of the exposed silicon film;
• and
• forming a silicide layer in the silicon film by performing heat treatment on the metal film, wherein the silicide layer is formed so as to include a first region in which a thickness of the silicide layer is increased and a second region in which a thickness of the silicide layer is uniform.

A manufacturing method of a semiconductor device, comprising the steps of:

• forming an amorphous silicon film over a substrate with an insulating layer interposed therebetween;
• crystallizing the amorphous silicon film to form a crystalline silicon film;
• forming an insulating film over the crystalline silicon film;
• forming an impurity region in the crystalline silicon film;
• selectively exposing the crystalline silicon film by selectively removing the insulating film;
• forming a metal film in contact with a surface of the exposed crystalline silicon film so that a thickness of the metal film is thinnest on a side surface of the insulating film and continuously increased until reaching an outer side surface of the exposed crystalline silicon film;
• and
• forming a silicide layer in the crystalline silicon film by performing heat treatment on the metal film, wherein the silicide layer is formed so as to include a first region in which a thickness of the silicide layer is increased and a second region in which a thickness of the silicide layer is uniform.