Methods for forming a semiconductor structure

A method of forming a semiconductor structure, the method comprising:

• forming a dielectric material over at least one bond pad, the dielectric material comprising a photosensitive polyimide material;
• removing at least one portion of the dielectric material to expose at least a portion of the at least one bond pad;
• heating the dielectric material to a first temperature after removing the at least one portion of the dielectric material, the first temperature less than or equal to a glass transition temperature of the dielectric material;
• heating the dielectric material to a second temperature after heating the dielectric material to the first temperature, the second temperature greater than the glass transition temperature of the dielectric material;
• and
• plating a nickel material on the at least one bond pad.