US 8,569,162 B2 · Conductive bump structure on substrate and fabrication method thereof

Abstract

A conductive bump structure is formed on a substrate having a plurality of bonding pads and a first insulating layer thereon. The first insulating layer has a plurality of openings formed therein for exposing the bonding pads and a conductive post is formed on the bonding pads exposed through the openings. Therein, a gap is formed between the conductive post and the wall of the opening such that no contact occurs between the conductive post and the first insulating layer, thereby preventing delamination of the conductive bump structure caused by stresses concentrating on an interface of different materials as in the prior art.

Claims9

Dependent claims

A fabrication method of a conductive bump structure on a substrate, the substrate having a plurality of bonding pads, and a first insulating layer and a second insulating layer formed thereon, wherein the first insulating layer is formed on the second insulating layer, the first insulating layer has a plurality of first openings for exposing the corresponding bonding pads, and the second insulating layer is formed with a plurality of second openings for exposing the bonding pads, the method comprising the steps of:

forming a metal layer on each of the bonding pads;
forming a conductive post on the metal layer;
and
forming a conductive material on the conductive post, wherein a gap is formed between the conductive post and a wall of the first opening, and another gap is formed between the conductive post and a wall of the second opening.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

13/644,006Filed 3 Oct 2012

Priority

TW 101109805 A22 Mar 2012

Published

US 2013/0249082 A126 Sep 2013

Granted

29 Oct 2013

Term ends

Not estimatedThe source records don’t support an estimate.

Classification23 codes

H10W 74/012
Manufacture or treatment: of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills
H10W 74/15
Characterised by their shape or disposition: on active surfaces of flip-chip devices, e.g. underfills
H10W 70/60
Package substrates; Interposers; Redistribution layers [RDL]: insulating or insulated package substrates; Interposers; Redistribution layers
H10W 70/66
Characterised by their interconnections: conductive materials thereof

Conductive bump structure on substrate and fabrication method thereof

Life of this patent

Conductive bump structure on substrate and fabrication method thereof

Life of this patent

Abstract

Claims9