Method for forming ultra-shallow doping regions by solid phase diffusion
AssigneeTokyo Electron Limited
InventorRobert D. Clark
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Abstract
A method for forming an ultra-shallow dopant region in a substrate is provided. In one embodiment, the method includes depositing a dopant layer in direct contact with the substrate, the dopant layer containing an oxide, a nitride, or an oxynitride, where the dopant layer contains a dopant selected from aluminum (Al), gallium (Ga), indium (In), thallium (Tl), nitrogen (N), phosphorous (P), arsenic (As), antimony (Sb), and bismuth (Bi). The method further includes patterning the dopant layer; and forming the ultra-shallow dopant region in the substrate by diffusing the dopant from the patterned dopant layer into the substrate by a thermal treatment.
Claims6
A method for forming an ultra-shallow dopant region in a substrate, the method comprising:
- depositing a dopant layer in direct contact with a recessed feature of the substrate, the dopant layer containing (i) a nitride, or (ii) an oxynitride, wherein the dopant layer contains a dopant selected from aluminum (Al), gallium (Ga), indium (In), thallium (Tl), nitrogen (N), phosphorous (P), arsenic (As), antimony (Sb), and bismuth (Bi), wherein in (i) the nitride is deposited by atomic layer deposition (ALD) using a reactant gas containing NH3, and wherein in (ii) the oxynitride is deposited by ALD using a reactant gas containing a) H2O, O2, or O3, and NH3, or b) NO, NO2 or N2O, and optionally one or more of H2O, O2, O3, and NH3;
- patterning the dopant layer;
- and
- forming the ultra-shallow dopant region in the recessed feature of the substrate by diffusing the dopant from the patterned dopant layer into the recessed feature of the substrate by a thermal treatment.
Dependencies are inferred from the claim text.