Multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same

A method of manufacturing a thin film integrated circuit, comprising:

• obtaining a ceramic substrate;
• depositing a glass dielectric buffer layer over the substrate;
• smoothing the buffer layer's surface;
• forming multiple layers of a thin film multi-level capacitor over the buffer layer surface, the forming of the multiple capacitor layers including providing high permittivity dielectric layers interleaved between electrode layers to form multiple capacitors stacked on each other, wherein pairs of the multiple capacitors share a common electrode therebetween;
• annealing each capacitor layer before forming the successive capacitor layer;
• and
• forming a high density interconnect layer between the ceramic substrate and the buffer layer, wherein the deposited buffer layer provides electrical isolation between the high density interconnect layer and the thin film multi-level capacitor.

A method of manufacturing a thin film integrated circuit, comprising:

• obtaining a ceramic substrate;
• depositing a glass dielectric buffer layer over the substrate;
• smoothing the buffer layer's surface;
• forming multiple layers of a thin film multi-level capacitor over the buffer layer surface, the forming of the multiple capacitor layers including providing high permittivity dielectric layers directly interleaved between electrode layers to form multiple capacitors stacked on each other, wherein pairs of the multiple capacitors share a common electrode therebetween, wherein at least a first capacitor of the multiple capacitors is a tunable capacitor;
• and
• forming a high density interconnect layer between the ceramic substrate and the buffer layer, wherein the deposited buffer layer provides electrical isolation between the high density interconnect layer and the thin-film multi-level capacitor.