Integrated circuit with a fin-based fuse, and related fabrication method
AssigneeGlobalfoundries Inc.
InventorsRandy W. Mann, Kingsuk Maitra, Anurag Mittal
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Abstract
Methods of fabricating an integrated circuit with a fin-based fuse, and the resulting integrated circuit with a fin-based fuse are provided. In the method, a fin is created from a layer of semiconductor material and has a first end and a second end. The method provides for forming a conductive path on the fin from its first end to its second end. The conductive path is electrically connected to a programming device that is capable of selectively directing a programming current through the conductive path to cause a structural change in the conductive path to increase resistance across the conductive path.
Claims19
A method of fabricating an integrated circuit including a fin-based fuse, the method comprising:
- creating a primary fin and adjacent fins from a layer of semiconductor material, wherein each of the primary fin and adjacent fins has a first end, a central portion and a second end;
- etching the central portion of each of the adjacent fins;
- forming metal silicide on the primary fin to establish a conductive path on the primary fin from the first end of the primary fin to the second end of the primary fin;
- and
- electrically connecting the conductive path to a programming device capable of selectively directing a programming current through the conductive path to cause a structural change in the conductive path to increase resistance across the conductive path.
A method of fabricating an integrated circuit with a fin-based fuse, the method comprising:
- creating fins from a layer of intrinsic semiconductor material, wherein each of the fins has a first end, a central portion, and a second end, and wherein the fins include a selected fin and non-selected fins;
- growing an epitaxial layer on the first end of each of the fins to merge the first ends, and on the second end of each of the fins to merge the second ends;
- saliciding the central portion of the selected fin and the epitaxial layer and forming metal silicide to establish a conductive path on the selected fin from the first end of the selected fin to the second end of the selected fin;
- and
- electrically connecting the conductive path to a programming device capable of selectively directing a programming current through the conductive path to cause a structural change in the conductive path to increase resistance across the conductive path.
A method of fabricating an integrated circuit with a fin-based fuse, the method comprising:
- creating fins from a layer of intrinsic semiconductor material, wherein each of the fins has a first end, a central portion, and a second end, and wherein the fins include a selected fin and non-selected fins;
- masking the first end and the second end of each of the fins and the central portion of the selected fin to define unmasked central portions;
- etching the unmasked central portions;
- growing an epitaxial layer on the central portion of the selected fin;
- and
- saliciding the epitaxial layer to produce a metal silicide on the selected fin establishing a conductive path on the selected fin from the first end of the selected fin to the second end of the selected fin;
- and
- electrically connecting the conductive path to a programming device capable of selectively directing a programming current through the conductive path to cause a structural change in the conductive path to increase resistance across the conductive path.
Dependencies are inferred from the claim text.