Method of forming a compliant bipolar micro device transfer head with silicon electrodes
AssigneeLuxVue Technology Corporation
InventorsDariusz Golda, Andreas Bibl
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Abstract
A compliant bipolar micro device transfer head array and method of forming a compliant bipolar micro device transfer array from an SOI substrate are described. In an embodiment, a compliant bipolar micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include first and second silicon interconnects, and first and second arrays of silicon electrodes electrically connected with the first and second silicon interconnects and deflectable into one or more cavities between the base substrate and the silicon electrodes.
Claims26
A method of forming a compliant bipolar transfer head array comprising:
- etching a top silicon layer of a silicon-on-insulator stack to form a first array of silicon electrodes electrically connected with a first silicon interconnect, and a second array of silicon electrodes aligned with the first array of silicon electrodes and electrically connected with a second silicon interconnect to form an array of bipolar silicon electrode pairs, each silicon electrode in the first and second arrays of silicon electrodes including an electrode lead and a mesa structure that protrudes above the first and second silicon interconnects;
- forming a dielectric layer over the first and second arrays of silicon electrodes;
- and
- etching one or more cavities in the base substrate directly underneath the first and second arrays of silicon electrodes such that each silicon electrode in the first and second arrays of silicon electrodes is deflectable into the one or more cavities.
Dependencies are inferred from the claim text.