Mono-layer and multi-layer nanowire networks

A method, comprising:

• providing a plurality of nanowires comprising CdX, wherein X is S or Se;
• bismuth in an atomic percentage that is between about 5% and about 20%;
• and iodide in an atomic percentage that is between about 3% and about 10%;
• and
• removing at least a portion of a nanowire.

An ordered, planar network of nanostructures, comprising:

• a plurality of nanowires intersecting at a plurality of intersection points that are parallel to, and within the plane, of a substrate, wherein the plurality of nanowires are substantially a single crystalline structure and wherein the nanowires comprise CdX, wherein X is S or Se;
• bismuth in an atomic percentage that is between about 5% and about 20%;
• and iodide in an atomic percentage that is between about 3% and about 10%;
• and
• wherein intersecting nanowires are covalently bonded at intersection points.

A nanowire, comprising:

• CdX, wherein X is S or Se;
• bismuth in an atomic percentage that is between about 5% and about 20%;
• and
• iodide in an atomic percentage that is between about 3% and about 10%.

An ordered, planar network of nanostructures, comprising:

• a plurality of nanowires intersecting at a plurality of or substantially 30° intersection points that are parallel to, and within the plane of, a substrate, wherein the plurality of nanowires are substantially a single crystalline structure and wherein the nanowires comprise CdX, wherein X is S or Se;
• bismuth in an atomic percentage that is between about 5% and about 20%;
• and iodide in an atomic percentage that is between about 3% and about 10%;
• and
• wherein intersecting nanowires are covalently bonded at intersection points.