Nonvolatile semiconductor memory device

A nonvolatile semiconductor memory device comprising:

• a plurality of first interconnections arranged parallel to one another,
• a plurality of second interconnections arranged parallel to one another and provided separately from the first interconnection layer, the plurality of second interconnections intersecting the first interconnections,
• a plurality of third interconnections arranged parallel to one another and provided separately from the first and second interconnections, the plurality of third interconnections intersecting the second interconnections, and
• memory cell portions respectively arranged at intersecting portions between the first interconnections and the second interconnections and at intersecting portions between the second interconnections and the third interconnections, each of the memory cell portions including a variable-resistance element that stores a state of different resistance as information and a diode element having a rectifying characteristic, the variable-resistance element and the diode element being laminated between the first and second interconnections and between the second and third interconnections,
• wherein the diode element has a laminated structure including a first insulating film, a conductive fine grain layer containing conductive fine grains and a second insulating film sequentially arranged between the first and second interconnections and between the second and third interconnections, physical film thickness of the second insulating film is greater than physical film thickness of the first insulating film and a dielectric constant of the second insulating film is greater than a dielectric constant of the first insulating film.

A nonvolatile semiconductor memory device comprising:

• a plurality of memory cell units laminated on or above a substrate,
• each memory cell unit includes:
• a plurality of first interconnections arranged parallel to one another,
• a plurality of second interconnections arranged parallel to one another and provided separately from the first interconnections, the plurality of second interconnections intersecting the first interconnections, and
• memory cell portions respectively arranged at intersecting portions between the first interconnections and the second interconnections, each of the memory cell portions including a variable-resistance element that stores a state of different resistance as information and a diode element having a rectifying characteristic, the variable-resistance element and the diode element being laminated between the first and second interconnections,
• wherein the diode element has a laminated structure including a first insulating film, a conductive fine grain layer containing conductive fine grains and a second insulating film sequentially arranged from the side of the first interconnections, physical film thickness of the second insulating film is greater than physical film thickness of the first insulating film and a dielectric constant of the second insulating film is greater than a dielectric constant of the first insulating film.